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Thus, the silicon layers and of about mm square were separated from the round wafer of 8 inches diameter and transferred onto the polyimide film FIG. The present invention has specifically been described above by giving Examples. The present invention is by no means construed limitative by the foregoing Examples, and is modifiable in variety. For example, the foregoing description concerns production of solar cells by separating rectangular semiconductor layers from round-wafer type substrates, but the form of the electrodes for removing the peripheral portion and electrodes for forming the anti-reflection layer can be set as desired, and hence semiconductor layers having any desired forms can be separated from substrates having any desired forms.

In all the foregoing Examples, the porous layer is utilized as a separating layer, but a semiconductor member having a separating layer formed by providing a brittle portion in the interior of the wafer can also be treated in quite the same manner as the above, by, e. Thereafter, the removal of peripheral portion, the separating and so forth may be followed up likewise according to the steps of, e. As having been described above, the present invention has made it possible to obtain in a good efficiency semiconductor members and thin-film crystal solar cells having less cracks or breaks and good characteristics.

Bulk Crystal Growth: Methods and Materials

This has made it possible to provide in the market semiconductor members and solar cells having mass productivity and good quality. The present invention also has made it possible to form through simple steps thin-film crystal solar cells having good characteristics, making it possible to produce inexpensive solar cells. The present invention still also has made it possible to form with ease semiconductor members and thin-film crystal solar cells having any desired forms. Effective date : Year of fee payment : 4.

In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: 1 anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, 2 forming a semiconductor layer at least on the surface of the porous layer, 3 removing the semiconductor layer at its peripheral region, 4 bonding a second substrate to the surface of the semiconductor layer, 5 separating the semiconductor layer from the first substrate at the part of the porous layer, and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

Field of the Invention This invention relates to a method of separating a semiconductor thin film deposited on a porous layer, a process for producing a semiconductor member, a process for producing a solar cell formed of a thin-film single crystal layered on a low-cost substrate, and an anodizing apparatus used in these. Related Background Art A technique is known in which a thin-film semiconductor layer is formed on a porous layer formed at the surface portion or layer of a semiconductor substrate and thereafter the semiconductor layer is separated at the part of the porous layer.

SUMMARY OF THE INVENTION An object of the present invention is to provide a process for producing a semiconductor member and a solar cell, which process enables separation of the thin-film semiconductor layer at a small force while causing less cracks, breaks or defects to be brought into it and can manufacture high-performance semiconductor members and solar cells in a good efficiency. To achieve the above object, the present invention provides a process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate; 2 forming a semiconductor layer at least on the surface of the porous layer; 3 removing the semiconductor layer at its peripheral region; 4 bonding a second substrate to the surface of the semiconductor layer; 5 separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

The present invention also provides a process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate; 2 forming a semiconductor layer at least on the surface of the porous layer; 3 bonding a second substrate to the semiconductor layer; 4 removing the semiconductor layer at its region not covered with the second substrate; 5 separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

The present invention still also provides a process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate; 2 forming a semiconductor layer at least on the surface of the porous layer; 3 removing the semiconductor layer at its peripheral region; 4 bonding a second substrate to the surface of the semiconductor layer; 5 separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

The present invention further provides a process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate; 2 forming a semiconductor layer at least on the surface of the porous layer; 3 bonding a second substrate to the semiconductor layer; 4 removing the semiconductor layer at its region not covered with the second substrate; 5 separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

The present invention still further provides a process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer; 2 forming a semiconductor layer on the surface of the porous layer; 3 removing the semiconductor layer at its part on the periphery of the first substrate by electropolishing; 4 bonding a second substrate to the surface of the semiconductor layer; 5 separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second a substrate; and 6 treating the surface of the first substrate after separation and repeating the above steps 1 to 5.

The present invention still further provides a process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of: 1 anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer; 2 forming a semiconductor layer on the surface of the porous layer; 3 removing the semiconductor layer and the porous layer at their part on the periphery of the first substrate by electropolishing; 4 forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate; 5 bonding a second substrate to the surface of the semiconductor layer; 6 separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second substrate; and 7 treating the surface of the first substrate after separation and repeating the above steps 1 to 6.

Embodiment 1 As an embodiment according to the present invention, a process for producing a semiconductor member is described with reference to FIGS. Embodiment 2 As another embodiment according to the present invention, a semiconductor member production process employing electropolishing is described with reference to FIGS. Embodiment 3 As still another embodiment according to the present invention, a thin-film crystal solar cell production process employing electropolishing is described with reference to FIGS.

Embodiment 4 As a further embodiment according to the present invention, a thin-film crystal solar cell production process employing electropolishing is described with reference to FIGS. Example 3 On both sides of a polycrystalline silicon wafer FIG. Example 4 One side of a single-crystal silicon wafer FIG. Example 5 On one side of a single-crystal wafer of 5 inches diameter, a porous layer was formed in the same manner as in Example 1. Example 6 One side of a single-crystal silicon wafer FIG. Example 7 The present Example concerns production of a semiconductor member by transferring a single-crystal silicon layer to a glass substrate according to the process shown in FIGS.

Example 8 The present Example concerns production of a solar cell by transferring a thin-film single-crystal silicon layer to a polyimide film according to the process shown in FIGS. Example 9 The present Example concerns production of a solar cell by transferring a polycrystalline silicon layer to a Tefzel film transparent film according to the process shown in FIGS.

Introduction

What is claimed is: 1. A process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of:. The process for producing a semiconductor member according to claim 1 , wherein, in the step 3 , the semiconductor layer at its peripheral region is removed together with the porous layer lying directly beneath that region. A process for producing a semiconductor member according to claim 1 , wherein, in the step 3 , the semiconductor layer at its peripheral portion is removed by etching by electropolishing. The process for producing a semiconductor member according to claim 3 , wherein, in the step 3 , the semiconductor layer at its peripheral portion is removed together with the porous layer lying directly beneath that region.

The process for producing a semiconductor member according to claim 3 , wherein the porous layer comprises two or more layers.


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The process for producing a semiconductor member according to claim 3 , wherein the semiconductor layer is etched into a desired form by the electropolishing etching. The process for producing a semiconductor member according to claim 7 , wherein, in the step 4 , the semiconductor layer at its region not covered with the second substrate is removed together with the porous layer lying directly beneath that region. The process for producing a semiconductor member according to claim 1 or 7 , wherein the first substrate comprises silicon. The process for producing a semiconductor member according to claim 1 or 7 , wherein the first substrate comprises a monocrystalline material.

The process for producing a semiconductor member according to claim 1 or 7 , wherein, in the step a 2 , a semiconductor junction is formed in the semiconductor layer. A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:.

The process for producing a solar cell according to claim 12 , wherein, in the step 3 , the semiconductor layer at its peripheral region is removed together with the porous layer lying directly beneath that region. A process for producing a solar cell according to claim 12 , wherein, in the step 3 , the semiconductor layer at its peripheral portion is removed by etching by electropolishing. The process for producing a solar cell according to claim 14 , wherein the porous layer comprises two or more layers.

The process for producing a solar cell according to claim 14 , wherein the semiconductor layer is etched into a desired form by the electropolishing etching. The process for producing a solar cell according to claim 17 , wherein, in the step 4 , the semiconductor layer at its region not covered with the second substrate is removed together with the porous layer lying directly beneath that region. The process for producing a solar cell according to claim 12 or 17 , wherein the first substrate comprises silicon. The process for producing a solar cell according to claim 12 or 17 , wherein the first substrate comprises a monocrystalline material.

The process for producing a solar cell according to claim 12 or 17 , wherein, in the step 2 , a semiconductor junction is formed in the semiconductor layer. The process for producing a semiconductor member according to claim 22 , wherein, in the step 3 , the semiconductor layer at its peripheral portion is removed together with the porous layer lying directly beneath that portion. The process for producing a semiconductor member according to claim 22 , wherein the first substrate comprises silicon. The process for producing a semiconductor member according to claim 22 , wherein the first substrate comprises a monocrystalline material.

The process for producing a semiconductor member according to claim 22 , wherein, in the step 2 , a semiconductor junction is formed in the semiconductor layer. The process for producing a semiconductor member according to claim 22 , which further comprises, between the steps 5 and 6 , the step of forming a semiconductor junction on the surface of the semiconductor layer having been transferred to the second substrate. The process for producing a semiconductor member according to claim 22 , wherein the second substrate comprises a flexible film, and force that acts in the direction where the film is separated from the first substrate is applied to the film to separate the semiconductor layer at the part of the porous layer.

The process for producing a semiconductor member according to claim 28 , wherein the flexible film comprises a resinous film. The process for producing a solar cell according to claim 30 , wherein, in the step 3 , the semiconductor layer at its peripheral portion is removed together with the porous layer lying directly beneath that portion.

The process for producing a solar cell according to claim 30 , wherein the first substrate comprises silicon. The process for producing a solar cell according to claim 30 , wherein the first substrate comprises a monocrystalline material. The process for producing a solar cell according to claim 30 , wherein, in the step 2 , a semiconductor junction is formed in the semiconductor layer. The process for producing a solar cell according to claim 30 , which further comprises, between the steps 6 and 7 , the step of forming a semiconductor junction on the surface of the semiconductor layer having been transferred to the second substrate.

The process for producing a solar cell according to claim 38 , wherein the flexible film comprises a resinous film. The semiconductor substrate and the solar cell manufacturing method and anodizing apparatus. Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus.

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Tec Silicon on Insulator Technologies S. Skip to content. Search for books, journals or webpages All Pages Books Journals. View on ScienceDirect. Authors: Sadik Dost Brian Lent. Hardcover ISBN: Imprint: Elsevier Science. Published Date: 29th September Page Count: For regional delivery times, please check When will I receive my book? Sorry, this product is currently out of stock. Flexible - Read on multiple operating systems and devices. Easily read eBooks on smart phones, computers, or any eBook readers, including Kindle.