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Semiconductor compounds Transistors. Issue Vol.

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nanoHUB-U MOSFET Essentials L5.5: Additional Topics - Heterostructure Bipolar Transistors (HBTs)

Figure 6 Possible trap locations and their couplings to the transistor terminals by tunneling, recombination, and capacitively coupled transitions. Figure 7 Sample 2 at zero magnetic field. Sign up to receive regular email alerts from Physical Review Applied.


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Journal: Phys. X Rev. A Phys.

Scaling of SiGe heterojunction bipolar transistors — Korea University

B Phys. C Phys. D Phys. E Phys. Fluids Phys. Materials Phys. Applied Phys. Beams Phys.

Heterojunction bipolar transistor

ST Accel. ST Phys. Wide- bandgap semiconductors such as gallium nitride and indium gallium nitride are especially promising. In SiGe graded heterostructure transistors, the amount of germanium in the base is graded, making the bandgap narrower at the collector than at the emitter. That tapering of the bandgap leads to a field-assisted transport in the base, which speeds transport through the base and increases frequency response.

Keywords/Phrases

Due to the need to manufacture HBT devices with extremely high-doped thin base layers, molecular beam epitaxy is principally employed. In addition to base, emitter and collector layers, highly doped layers are deposited on either side of collector and emitter to facilitate an ohmic contact , which are placed on the contact layers after exposure by photolithography and etching. The contact layer underneath the collector, named subcollector, is an active part of the transistor. Other techniques are used depending on the material system.

Normally the epitaxial layers are lattice matched which restricts the choice of bandgap etc.

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If they are near-lattice-matched the device is pseudomorphic , and if the layers are unmatched often separated by a thin buffer layer it is metamorphic. N2 - Scaling has been the principal driving force behind the successful technology innovations of the past half-century. AB - Scaling has been the principal driving force behind the successful technology innovations of the past half-century.

School of Electrical Engineering. Abstract Scaling has been the principal driving force behind the successful technology innovations of the past half-century. Fingerprint Bipolar transistors.


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Heterojunction bipolar transistors.