The data are illustrated in Fig. A number of different combinations of unsaturated halocarbon and saturated halocarbon may be used in the etchings of Si wafers. A mixture of C 3 F 6 and CF 4 was made under a total pressure of 2.
- Introduction to Plasma Etching;
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The gas flow rate was 1. A power of 50 watts was applied at The SiO 2 excitation electrode area was cm 2. The following tabulation set forth the data obtained. In this system a gaseous mixture containing A mixture of C 2 F 4 and CF 4 having a total gas flow rate of 1. The total pressure in the vacuum system was about 2.
A watts of power was applied at The following tabulation sets forth the data obtained. The etch rate of Si0 2 was A method as claimed in claim 1, wherein the unsaturated halocarbon is C 3 F 6. A method as claimed in claim 1, wherein the unsaturated halocarbon is C 2 F 4. A method as claimed in claim 1, wherein the gaseous mixture contains C 3 F 6 and CF 4 ,.
Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si. A method of plasma etching silica at a faster rate than silicon in an article comprising both. USA en. EPB1 en. JPSB2 en. CAA en. DED1 en. ITB en.
- Plasma Etching techniques including RIE, PE, ICP, and DRIE.
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USB1 en. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window. Methods of forming openings and methods of controlling the degree of taper of openings.
Highly selective process for etching oxide over nitride using hexafluorobutadiene. USB2 en. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge.
Plasma Etching: An Introduction (Plasma : Materials Interactions)
EPA1 en. ITD0 en. JPSA en.
CAA1 en. Flamm et al. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen. KRB1 en. JPB2 en.
Process and electromagnetically coupled planar plasma apparatus for etching oxides. EPA2 en. An ashing method for removing an organic film on a substance of a semiconductor device under fabrication. Ref country code : DE Payment date : Year of fee payment : Ref country code : GB Payment date : Year of fee payment : Ref country code : FR Payment date : Year of fee payment : We use your LinkedIn profile and activity data to personalize ads and to show you more relevant ads. You can change your ad preferences anytime.
Plasma Etching - 1st Edition
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